IRLR7807Z 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

일치하는 목록

IRLR7807Z

HEXFET® Power MOSFET

International Rectifier 

IRLR/U7807Z

Static @ TJ = 25°C (unless otherwise specified)

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Min.

30

–––

–––

Typ.

–––

23

11

Max. Units

Conditions

––– V VGS = 0V, ID = 250µA

––– mV/°C Reference to 25°C, ID = 1mA

13.8 mΩ VGS = 10V, ID = 15A

VGS(th)

∆VGS(th)/∆TJ

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

–––

1.35

–––

14.5

1.8

-4.5

18.2

2.25

–––

VGS = 4.5V, ID = 12A

V VDS = VGS, ID = 250µA

mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

51 ––– ––– S VDS = 15V, ID = 12A

Qg

Total Gate Charge

––– 7.0 11

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 1.8 –––

VDS = 15V

––– 0.7 ––– nC VGS = 4.5V

––– 2.7 –––

ID = 12A

––– 1.8 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 3.4 –––

Qoss

td(on)

tr

td(off)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

––– 4.0 ––– nC VDS = 15V, VGS = 0V

––– 7.1 –––

VDD = 15V, VGS = 4.5V

––– 28 –––

ID = 12A

––– 9.8 ––– ns Clamped Inductive Load

tf

Fall Time

––– 3.5 –––

Ciss

Input Capacitance

––– 780 –––

VGS = 0V

Coss

Output Capacitance

––– 180 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 100 –––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

28

12

4.0

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 43

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

––– ––– 170

A showing the

integral reverse

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

2

––– ––– 1.0

––– 23 35

––– 14 21

p-n junction diode.

V TJ = 25°C, IS = 12A, VGS = 0V

ns TJ = 25°C, IF = 12A, VDD = 15V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

Share Link: