1N3671A(2016) 데이터 시트보기 (PDF) - GeneSiC Semiconductor, Inc.
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1N3671A Datasheet PDF : 3 Pages
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Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 800 V to 1000 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3671A thru 1N3673AR
VRRM = 800 V - 1000 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 150 °C
TC = 25 °C, tp = 8.3 ms
1N3671A (R)
800
560
800
12
240
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3671A (R)
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF
IF = 12 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 175 °C
RthJC
1.1
10
15
2.00
1N3673A (R)
Unit
1000
V
700
V
1000
V
12
A
240
A
-55 to 150
°C
-55 to 150
°C
1N3673A (R)
1.1
10
15
2.00
Unit
V
μA
mA
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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