IRF6617PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
39
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Qgs2 + Qgd)
–––
Output Charge
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Typ.
–––
25
6.2
7.9
–––
-5.4
–––
–––
–––
–––
–––
11
3.1
1.0
4.0
2.9
5.0
10
11
34
12
3.7
1300
430
160
Max. Units
Conditions
–––
–––
8.1
10.3
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 15A e
VGS = 4.5V, ID = 12A e
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
17
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 12A
–––
VDS = 15V
––– nC VGS = 4.5V
–––
ID = 12A
–––
See Fig. 16
–––
––– nC VDS = 15V, VGS = 0V
–––
VDD = 16V, VGS = 4.5V e
–––
ID = 12A
––– ns Clamped Inductive Load
–––
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 53
MOSFET symbol
D
––– ––– 120
––– 0.81 1.0
––– 16 24
––– 7.2 11
A showing the
G
integral reverse
S
p-n junction diode.
V TJ = 25°C, IS = 12A, VGS = 0V e
ns TJ = 25°C, IF = 12A
nC di/dt = 100A/µs e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.40mH,
RG = 25Ω, IAS = 12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of part.
Rθ is measured at TJ of approximately 90°C.
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2
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