MMBD452 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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MMBD452 Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Dual Hot-Carrier Diodes
MMBD452
FEATURES
z Very low capacitance.
Pb
z Extremely low minority carrier lifetime. Lead-free
z Low reverse leakage.
z Power dissipation Pd=225mW.
APPLICATIONS
z Designed primarily for UHF and VHF detector
applications.
ORDERING INFORMATION
Type No.
Marking
MMBD452
5N
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
30
V
Power Dissipation
Pd
225
mW
Operating junction temperature range
TJ
-55 to+125
℃
Junction and storage temperature
TSTG
-55 to+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V(BR)
VF
30
0.38 0.45
0.52 0.6
IR
13 200
Unit Conditions
V IR=10μA
V
IF=1.0mA
IF=10mA
nA VR=25V
Total Capacitanc
CT
0.9 1.5
pF VR=15V,f=1MHz
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