IRF523 데이터 시트보기 (PDF) - Unspecified

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IRF523

N-Channel Power Mosfets, 11A,60-100V

Unspecified 

IRF120-123/IRF520-523

MTP10N08/10N10

N-Channel Power Mosfets,

11A,60-100V

Electrical Characteristics (Cont.) (Tc=25℃ unless otherwise noted)

Symbol

Characteristic

Min

On Characteristics

VGS(th)

Gate Threshold Voltage

IRF12-123/IRF520-523

2.0

RDS(on)

MTP10N08/10N10

2.0

Static Drain-Source On-Resistance2

IRF120/121/520/521

MTP10N08/10N10

IRF122/123/522/523

VDS(on)

Drain-Source On-Voltage 2

MTP 10N08/10N10

Max

4.0

4.5

0.30

0.33

0.40

4.0

3.3

gfs

Forward Transconductance

1.5

Dynamic Characteristics

Ciss

Input Capacitance

600

Coss

Output Capacitance

400

Crss

Reverse Transfer Capacitance

100

Switching Characteristics (Tc=25℃, Figure 1,2)3

td(on)

Turn-On Delay Time

40

tr

Rise Time

70

td(off)

Turn-Off Delay Time

100

tf

Fall Time

70

Qg

Total Gate Charge

15

Unit

V

Ω

V

V

S( )

pF

pF

pF

ns

ns

ns

ns

nC

Symbol

Characteristic

Source-Drain Diode Characteristics

VSD

Diode Forward Voltage

IRF120/121/520/521

IRF122/123/522/523

trr

Reverse Recovery Time

Typ

Max

Unit

2.5

V

2.3

V

280

ns

Notes

1. TJ=+25℃ to +150℃

2. Pulse width limited by TJ

3. Switching time measurements performed on LEM TR-58 test equipment.

Test Conditions

ID=250µA, VDS=VGS

ID=1mA, VDS=VGS

VGS=10V

ID=4.0A

ID=5.0A

ID=4.0A

VGS=10V; ID=10.0A

VGS=10V, ID=5.0A

Tc=100℃

VDS=10V, ID=4.0A

VDS=25V, VGS=0V

f=1.0MHz

VDD=50V, ID=4.0A

VGS=10V,RGEN=50 Ω

RGS=50 Ω

VGS=10V, ID=10A

VDD=50V

Test Conditions

IS=8.0A; VGS=0V

IS=7.0A; VGS=0V

IS=4.0A; dls/dt=25A/

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