IRFF9230 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRFF9230 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, IJnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ELECTRICAL CHARACTERISTICS, At Tc = 25° C (Unto* OthwwlM Specified)
CHAHACTCRIWC
TYPK MM. TYP. MAX. UNITS
TUT CONDITION*
Drain-Source Breakdown Voltage BVpw IRFF9230
-ZOO - -
IRFF9232
V
V0. = 0 V
IRFF8231
-150
IRFF9233
-
-
V
I0 = -250 //A
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Vo.lth) ALL -2.0 - -4.0
V
VM-VM, lo--250/iA
lam
ALL
- - -100 nA Va. - -20 V
low
ALL - - 100 DA rv,,, = 2ov
Zero-Gate Voltage Drain Current
On-State Drain Current 0
IMS
lo(on)
-
ALL
—
IRFF9230
-4.0
IRFF9231
- -250
— -1000
--
HA VM = Max. Rating, Vo. • 0 V
M VD« = Max. Rating x 0.8. Va. • 0 V.Tc - 125°C
A
IRFF9232
-3.5 - -
A
IRFF9233
Static Drain-Source On-State
Resistance ©
rM(on) IRFF9230
- 0.5 0.8
IRFF9231
IRFF9232
- 0.8 1.2
IRFF9233
n
VOB ~ 10V ID" 20A
n
Forward Tranaconductance (a)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Hue Time
Turn-Off Delay Time
Fall Time
g»
CM
C...
C*,
Won)
I,
t«(off)
t<
ALL 2 2 3.5 — S(U) Vo, > lo(on) x ros(on) max., ID - 2.0 A
ALL
- 550 -
PF
ALL
- 170 _.
V« = 0 V Voa = -25 V f = 1 0 MHz
PF
ALL
- 50 -
pF
ALL
- 30 50
ns VOD - O.SBVoaa, ID = 2.0 A. Za = 50 0
ALL
— I 50 100
na S««Flg. 17
ALL
- 50 100
ns (MOSFET switching times are essentially
ALL
- 40 80
na independent of operating temperature.)
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Q0
ALL
- 31 45
Vo» • -15 V, ID = -8.0 A, Vo> = 0.8 Max. Rating.
nC
3«e Fig. 18 for teat circuit. (Gats charge is essentially
Q,.
ALL
- 18 26
nC Independent of operating temperature.)
Gate-Drain (("Miller") Charge
Internal Drain Inductance
Q*
ALL i_Z_ 13 IB
nC
LD
ALL
5.0
nH Measured from the drain
Modified MOSFET
lead, 5mm (0.2 in.)
symbol showing The
from header to center
internal device
of die.
inductances.
°
Internal Source Inductance
U
ALL
"TS.O
^ik Measuredlrom the
/ 1 [~7t \e lead, 5mm (0.2 in.)
from header to source
~^
bonding pad.
s
Junctlon-to-Case
R«ie
ALL
- - 5,0 "C/W
Junction- to-Ambient
Ftju
ALL
— — >75 •c/w Typical socket mount.
SOURCE-DRAIN DIODE RATINQS AMD CHARACTERISTICS
Continuous Source Current
(Body Diode)
1, IRFF9230
- - -4.0
IRFF9231
Modified MOSFET symbol
A
showing the integral
IRFF9232
-
IRFF9233
- -3.5
reverse P-N junction rectifier,
A
Pulse Source Current
(Body Diode) ®
)>M IRFF9230
- - -16
A
IRFF9231
IRFF9232
- - -14
A
IRFF9233
s
Diode Forward Voltage®
V» IRFF9230
-
IRFF9231
- -1.5
V
TC = 25°C, I.--4.0A, Vo. = OV
IRFF9232
IRFF9233 -
_
-1.5
V
To = 25° C, Is • -3.5 A, Voi - 0 V
Reverse Recovery Time
t.
ALL
— 400 —
ns Tj * 1SO*C, Ir = -4.0 A, d!p/dt = 100A/ps
Revert* Recovered Charge
Forward Turn-on Time
QM
ALL
— 2.6 —
& Tj = 150*C, Ir - -4.0 A, dWdt « 100 A/*S
U
ALL Intrinsic turn-on time Is negligible. Turn-on spaed Is substantially controlled by Lt + LD.
®Tj-25'CtolSO-C
0 Repetitive Ruing; Pulse width limited
<5 Pulse Teat: Pulse width < 300 pi.
by max junction temperature
Duty Cycle £ 2%
See Transient Thermal Impedance Curve (Fig. 5).
© Vno = 50 V, Starting Tj = 25* C. L - 46.9 mH.
R« • 25 a Peek IL = 4.0 A (See Figs. 15 A 16).
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