BFX89 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BFX89 Datasheet PDF : 2 Pages
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- Conductor
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (inc..
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960
BFX89
BFY90
WIDE BAND VHF/UHF AMPLIFIER
, SILICON PLANAR EPITAXIAL TRANSISTORS
, TO-72 METAL CASE
, VERY LOW NOISE
APPLICATIONS :
t TELECOMMUNICATIONS
, WIDE BAND UHF AMPLIFIER
, RADIO COMMUNICATIONS
TO-72
DESCRIPTION
The BFXS9 and BFY90 are silicon planar epitaxial
NPN transistors produced using interdigitated base
emitter geometry. They are particulary designed for
use in wide band common-emitter linear amplifiers
up to 1 GHz. They feature very high fr, low reverse
capacitance, excellent cross modulation properties
and very low noise performance. The BFY90 is com-
plementary to the BFR99A. Typical applications in-
clude telecommunication and radio communication
equipment.
ABSOLUTE MAXIMUM RATINGS
- j ^ B o i JSymboiJ
Parameter
Collector-base Voltage (I6 = 0)
_V«R_ Collector-emitter Voltage (RBE £ 50 Q)
^£EO__ Collector-emitter Voltage (Is - 0)
^B0__ Emitter-base Voltage (Ic = 0)
—_|c___ Collector Current
—i«__ Collector Peak Current (f a 1 MHz)
—!il__ Total Power Dissipation at T,mb z 25 °C
-Ins/H Storage and Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
Unit
30
V
30
V
15
V
2.5
V
25
mA
50
mA
200
mW
- 65 to 200
°C
Quality Semi-Conductors
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