MUR20005CT(2018) 데이터 시트보기 (PDF) - GeneSiC Semiconductor, Inc.
부품명
상세내역
일치하는 목록
MUR20005CT Datasheet PDF : 3 Pages
| |||
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
• Not ESD Sensitive
MUR20005CT thru MUR20020CTR
VRRM = 50 V - 200 V
IF(AV) = 200 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
V
140
V
200
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at
rated DC blocking voltage (per
leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
IF(AV)
IFSM
VF
IR
Trr
RΘJC
TC = 140 °C
tp = 8.3 ms, half sine
IFM = 100 A, Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
2000
1.0
25
3
75
0.45
200
2000
1.0
25
3
75
0.45
200
2000
1.0
25
3
75
0.45
A
A
V
μA
mA
nS
°C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mur20005ct.pdf
1
Share Link: 