BFC505 데이터 시트보기 (PDF) - Philips Electronics

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BFC505

NPN wideband cascode transistor

Philips Electronics 

Philips Semiconductors

NPN wideband cascode transistor

Product specification

BFC505

FEATURES

• Small size

• High power gain at low bias current and high

frequencies

• High reverse isolation

• Low noise figure

• Gold metallization ensures excellent reliability

• Minimum operating voltage VC2−E1 = 1 V.

PINNING - SOT353

PIN

SYMBOL

DESCRIPTION

1

b2

base 2

2

e1

emitter 1

3

b1

base 1

4

c1/e2 collector 1/emitter 2

5

c2

collector 2

APPLICATIONS

• Low voltage, low current, low noise and high gain

amplifiers

• Oscillator buffer amplifiers

• Wideband voltage-to-current converters.

DESCRIPTION

Cascode amplifier with two discrete dies in a surface

mount, 5-pin SOT353 (S-mini) package. The amplifier is

primarily intended for low power RF communications

equipment, such as pagers and has a very low feedback

capacitance resulting in high isolation.

handbook, halfpage

5

4

123

Top view

c2

b2

c1/e2

b1

e1

MAM212

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.

SYMBOL

PARAMETER

CONDITIONS

MIN.

Cre

feedback capacitance CB1−C2 Ie = 0; VC2-E1 = 0; f = 1 MHz

−

s21 ⁄ s12 2 maximum isolation

IC = 5 mA; VC2 = VB2 = 3 V;

60

f = 900 MHz

MSG

maximum stable power gain IC = 0.5 mA; VC2 = VB2 = 1 V;

−

f = 900 MHz; Tamb = 25 °C

F

noise figure

IC = 0.5 mA; VC2-E1 = 1 V;

−

f = 500 MHz; ΓS = Γopt

IC = 1 mA; VC2-E1 = 3 V;

−

f = 900 MHz; ΓS = Γopt

Rth j-s

thermal resistance from

single loaded

−

junction to soldering point

double loaded

−

TYP.

−

−

22

1.1

1.8

−

−

MAX.

10

−

−

1.4

2.1

230

115

UNIT

fF

dB

dB

dB

dB

K/W

K/W

1996 Oct 08

2

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