ATP104 데이터 시트보기 (PDF) - ON Semiconductor

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ATP104

P-Channel Power MOSFET

ON Semiconductor 

ATP104

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--30V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--38A

ID=--38A, VGS=--10V

ID=--19A, VGS=--4.5V

VDS=--10V, f=1MHz

See specified Test Circuit.

VDS=--15V, VGS=--10V, ID=--75A

IS=--75A, VGS=0V

Switching Time Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --15V

ID= --38A

RL=0.39Ω

D

VOUT

ATP104

P.G

50Ω

S

Ratings

Unit

min

typ

max

--30

V

--1

μA

±10

μA

--1.2

--2.6

V

70

S

6.4

8.4 mΩ

9.6

13.5 mΩ

3950

pF

880

pF

610

pF

24

ns

520

ns

290

ns

260

ns

76

nC

18

nC

13

nC

--1.02

--1.5

V

Ordering Information

Device

ATP104-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1406-2/7

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