ATP104 데이터 시트보기 (PDF) - ON Semiconductor

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ATP104

P-Channel Power MOSFET

ON Semiconductor 

Ordering number : ENA1406A

ATP104

P-Channel Power MOSFET

–30V, –75A, 8.4mΩ, Single ATPAK

http://onsemi.com

Features

• Low ON-resistance

• Slim package

• Halogen free compliance

• Large current

• 4.5V drive

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note :*1 VDD=15V, L=100μH, IAV=38A

*2 L≤100μH, Single pulse

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

EAS

IAV

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

Ratings

Unit

--30

V

±20

V

--75

A

--225

A

60

W

150

°C

--55 to +150

°C

130 mJ

38

A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7057-001

6.5

4

1.5

0.4

ATP104-TL-H

4.6

2.6

0.4

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP104

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

Electrical Connection

4,2

1

3

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/20409PA MSIM TC-00001830 No. A1406-1/7

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