ATP207 데이터 시트보기 (PDF) - ON Semiconductor

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ATP207

N-Channel Power MOSFET

ON Semiconductor 

ATP207

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=40V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=33A

ID=33A, VGS=10V

ID=17A, VGS=4.5V

VDS=20V, f=1MHz

See specified Test Circuit.

VDS=20V, VGS=10V, ID=65A

IS=65A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=20V

ID=33A

RL=0.61Ω

D

VOUT

ATP207

P.G

50Ω

S

Ratings

Unit

min

typ

max

40

V

1

μA

±10

μA

1.5

2.6

V

12

20

S

7

9.1 mΩ

11

15.5 mΩ

2710

pF

330

pF

220

pF

27

ns

290

ns

170

ns

110

ns

54

nC

14

nC

11

nC

1.0

1.2

V

Ordering Information

Device

ATP207-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1319-2/7

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