IRF620 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

IRF620

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

IRF620

IRF620FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

IRF620

IRF620FI

VDSS

R DS( on)

ID

200 V

< 0.8 Ω

6A

200 V

< 0.8 Ω

4A

s TYPICAL RDS(on) = 0.55 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s MOTOR CONTROL, AUDIO AMPLIFIERS

s INDUSTRIAL ACTUATORS

s DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

3

2

1

3

2

1

TO-220

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (cont.) at Tc = 25 oC

ID

Drain Current (cont.) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

November 1996

Value

I RF 62 0

I RF 620FI

200

200

± 20

6

4

4

2

24

24

70

30

0. 56

0. 24



2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/9

Share Link: