PN4354 데이터 시트보기 (PDF) - Continental Device India Limited
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PN4354 Datasheet PDF : 4 Pages
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
EBC
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
Base Emitter Sat Voltage
SYMBOL TEST CONDITION
VBE(sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=1A,IB=100mA
4354
<0.9
<1.1
PN4355
Base Emitter On Voltage
VBE(on)*
IC=500mA,VCE=0.5V
IC=1A,VCE=1V
<1.1
PN4355
SMALL-SIGNAL
SYMBOL TEST CONDITION
4354
DYNAMIC CHARACTERISTICS
Collector to Base Capacitance
Emitter to Base Capacitance
Turn On Time
Turn off Time
Ccb IE=0, VCB=10V,
<30
f=1.0MHZ
Ceb IC=0, VEB=0.5V,
<110
f=1.0MHZ
ton IC =500mA,IB1 =50mA,
<100
VCC =30V
toff IC =500mA,IB1=IB2 =50mA,
VCC =30V
<400
PN4354
PN4355
PN4356
TO-92
Plastic Package
4355
<0.9
<1.1
<1.2
<1.1
<1.2
4356
<0.9
<1.1
<1.1
UNITS
V
V
V
V
V
4355
4356
UNITS
<30
<30
PF
<110
<110
PF
<100
<100
PF
<400
<400
ns
Noise Figure
*Pulse Condition:
NF VCE =10V,IC=100uA
RS=1KΩ,f=1kHZ,
BW = 1HZ
= 300us, Duty Cycle = 1%.
<3.0
<3.0
<3.0
dB
Continental Device India Limited
Data Sheet
Page 2 of 4
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