ZTX1056A 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZTX1056A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

ZTX1056A

TYPICAL CHARACTERISTICS

0.8

+25C

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Ic/I*=15

Ic/I*=20

Ic/I*=50

1mA 10mA 100mA

1A

10A

IC-Collector Current

VCE(sat) v IC

0.8

Ic/I*=20

0.7

0.6

- 55°C

0.5

+25°C

+100°C

0.4

+175°C

0.3

0.2

0.1

1mA 10mA 100mA

1A

10A

IC-Collector Current

VCE(sat) v IC

700 V+-=10V

600

+100°C

500

+25°C

400

300

-55°C

200

100

1mA 10mA 100mA

1A

10A

IC-Collector Current

hFE v IC

1.0

V+-=10V

0.8

-55°C

+25°C

0.6

+100°C

0.4

+175°C

0.2

1mA 10mA 100mA

1A

10A

IC-Collector Current

VBE(on) v IC

1.0 Ic/I*=20

-55°C

0.8

+25°C

0.6

+100°C

0.4

+175°C

0.2

1mA 10mA 100mA

1A

10A

IC-Collector Current

VBE(sat) v Ic

10

Single Pulse Test Tamb=25C

1

DC

1s

100ms

0.1

10ms

1ms

100us

0.01

0.1V

1V

10V

100V

VCE - Collector Voltage

Safe Operating Area

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