S1KBHM4G 데이터 시트보기 (PDF) - TSC Corporation
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S1KBHM4G Datasheet PDF : 6 Pages
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S1AB - S1MB
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
SYMBOL
RӨJL
LIMIT
30
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
Forward voltage per diode (1)
IF = 1A,TJ = 25°C
VF
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
TJ = 125°C
Junction capacitance
Notes:
1 MHz, VR=4.0V
CJ
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP
-
-
-
12
MAX
1.1
5
50
-
UNIT
V
µA
µA
pF
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING PACKING CODE
CODE
SUFFIX(*)
R5
S1xB
H
R4
G
(Note 1)
M4
Note:
1. "x" defines voltage from 50V (S1AB) to 1000V (S1MB)
: Optional available
PACKAGE
PACKING
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N PART NO.
S1ABHR5G
S1AB
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:H1701
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