BTA06-600B 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
일치하는 목록
BTA06-600B Datasheet PDF : 5 Pages
| |||
SEMICONDUCTOR
TECHNICAL DATA
Bi-Directional Triode Thyristor
Designed for high performance full-wave
ac control applications where high noise immunity
and high commutating di/dt are required.
BTA06-600B
TO-220AB
Features
• Blocking Voltage to 600 V
• On-State Current Rating of 6A RMS at 100℃
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt-1500V/us minimum at 125℃
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt- 4.0A/ms minimum at 125℃
• Internally Isolated (2500VRMS)
• These are Pb-Free Devices
1 23
Symbol
○ 2.T2
▼▲
○ 3.Gate
1.T1 ○
Absolute Maximum Ratings
Symbol
IT(RMS)
ITSM
I2t
DI/DT
IGM
PG(AV)
Tstg
Tj
Parameter
TO-220AB
RMS on-state current(full since wave)
TO-220AB lns.
Non repetitive surge peak on-state
F=50Hz
current(full cycle, Tj initial=25℃)
F=60Hz
I2t Value for fusing
tp=10ms
Critical rate of rise of on-state current
IG=2XIGT,tr≤100ns
F=120Hz
Peak gate current
tp=20us
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TC=110℃
TC=100℃
t=20ms
t=16.7ms
Tj=125℃
Tj=125℃
Tj=125℃
Value
6
60
65
31
50
2
0.5
-40 to +150
-40 to +125
Unit
A
A
A2s
A/us
A
W
℃
2015.08. 12
Revision No : 0
1/5
Share Link: 