BCW60A 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

부품명

상세내역

일치하는 목록

BCW60A

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BCW60A ... BCW60D

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

VCEsat

VCEsat

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VBEsat

VBEsat

IC = 10 µA, VCE = 5 V

VBE

IC = 2 mA, VCE = 5 V

VBE

IC = 50 mA, VCE = 1 V

VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

ICB0

VCE = 30 V, Tj = 125°C, (E open)

ICB0

Emitter-Base cutoff current

VEB = 4 V, (C open)

IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 10 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

120 mV 250 mV

–

200 mV 550 mV

–

700 mV 850 mV

–

830 mV 1050 mV

–

550 mV

–

520 mV

650 mV

780 mV

–

750 mV

–

–

–

20 nA

–

–

20 µA

–

–

20 nA

100 MHz 250 MHz

–

–

2 pF

–

–

11 pF

–

–

2 dB

6 dB

< 420 K/W 1)

BCW61A ... BCW61D

BCW60A = AA

BCW60B = AB

BCW60C = AC

BCW60D = AD

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

Share Link: