BCW65C 데이터 시트보기 (PDF) - Fairchild Semiconductor

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BCW65C

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0

32

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10 µA, IE = 0

60

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

5.0

ICES

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

VCB = 32 V, IE = 0

VCB = 32 V, IE = 0, TA = 150°C

VEB = 4.0 V, IC = 0

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 100 µA, VCE = 10 V

80

IC = 10 mA, VCE = 1.0 V

180

IC = 100 mA, VCE = 1.0 V

250

IC = 500 mA, VCE = 2.0 V

50

VCE(sat)

Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA

IC = 500 mA, B = 50 mA

VBE(sat)

Base-Emitter Saturation Voltage

IC = 500 mA, IB = 50 mA

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Current Gain - Bandwidth Product

IC = 20 mA, VCE = 10 V,

100

f = 100 MHz

Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

Cibo

Input Capacitance

VEB = 0.5 V, IC = 0, f = 1.0 MHz

NF

Noise Figure

IC = 0.2 mA, VCE = 5.0,

RS = 1.0 kΩ, f = 1.0 kHz,

BW = 200 Hz

V

V

V

20

nA

20

µA

20

nA

630

0.3

V

0.7

2.0

V

MHz

12

pF

80

pF

10

dB

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

400

VCE = 5V

125 °C

300

200

25 °C

100

- 40 °C

0

0.1 0.3

1

3

10 30 100 300

IC - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

0.4

β = 10

0.3

0.2

0.1

1

125 °C

25 °C

- 40 °C

10

100

500

I C - COLLECTOR CURRENT (mA)

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