MBM29LV016B 데이터 시트보기 (PDF) - Fujitsu

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MBM29LV016B

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC

=

3.0

V

+0.3 V

–0.3 V

VCC

=

3.0

V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

s BLOCK DIAGRAM

MBM29LV016T/MBM29LV016B

-80

—

—

—

-90

-12

80

90

120

80

90

120

30

35

50

VCC

VSS

WE

RESET

CE

OE

RY/BY

Buffer

RY/BY

Erase Voltage

Generator

DQ0 to DQ7

Input/Output

Buffers

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB Data Latch

A0 to A20

STB

Y-Decoder

Low VCC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

6

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