2N5962_D74Z 데이터 시트보기 (PDF) - Fairchild Semiconductor
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2N5962_D74Z Datasheet PDF : 10 Pages
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Discrete POWER & Signal
Technologies
2N5962
MMBT5962
C
C
BE
TO-92
SOT-23
Mark: 117
E
B
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
45
VEBO
Emitter-Base Voltage
8.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5962
625
5.0
83.3
200
*MMBT5962
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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