2N6769 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N6769 Datasheet PDF : 2 Pages
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2N6769/2N6770
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Off Characteristics
Characteristic
Mln
Max
V(BR)DSS Drain Source Breakdown Voltage1
2N6770
5002
2M6769
4502
loss
Zero Gate Voltage Drain Current
1
4
IGSS
Gate-Body Leakage Current
On Characteristics
VGS(I!>) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance'
2N6770
2N6769
2N6770
2N6769
Vos(on)
Drain-Source On-Voltage'
2N6770
2N6769
9fs
Forward Transconductance
8.0
Dynamic Characteristics
Cjse
Input Capacitance
1000
Cdss
Output Capacitance
200
C,8S
Reverse Transfer Capacitance
50
Switching Characteristics (Tc - 25°C. Figures 9, 10)
ld(tm)
tr
*d(offl
tf
Q8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
±100
4.0
0.4
0.5
0.88
1.10
6.0
6,0
24
3000
eoo
200
35
60
150
70
120*
Unit 1
Test Conditions
V
VGS - o V, b - 4 mA
ItlA
VDs = Rated VDSS. Ves - 0 V
V0s " Rated VDSS.
VQS-O V, TC=125'C
nA
VGS -±20 V, Vos-0 V
V
il
V
s (u>
ID-1 mA, VOS-VQS
VQS - 1 0 V
ID = 7.75 A
ID - 7.0 A
ID -7.75 A, Tc-126'C
ID -7.0 A, TC=125°C
VQS -10 V
ID -12 A
ID = 11 A
VDS -15 V, ID -7.75 A
PF
VDS-25 V. VQS = 0 V
f-1.0 MHz
PF
PF
ns
Vrjo = 210 V, I0 = 7.75 A
ns
VQS -10V, R0EN-4.7 n
RQS = 4.7 J2
ns
ns
nC
VQS =10 V, ID =16 A
VDD - 400 V
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Win
Typ
Max
Source-Drain Dlade Characteristics
is
Continuous Source Current
2N6770
122
2N6769
(SM
Pulsed Source Current
2N6770
25J
2N6769
202
VSD
Diode Forward Voltage
2N6770
0.80
1.6
2N6769
0.75
1,5
Reverse Recovery Time
•"
1300s
QHR
Reverse Recovery Charge
7.4s
Unit
Test Conditions
A
A
V
VGS-O V
Is -12 A
Is -11 A
ns
VQS-O V, Tj-150°C
IF -ISM, d!F/dt--100 A//JS
nC
VQS-O V, Tj = 150'C
IF = ISM. dlp/dt- 100 A/JUS
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