2N5339JX 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N5339JX Datasheet PDF : 2 Pages
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2N5339
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50 mA
100
Volts
Collector-Base Cutoff Current
ICBO VCB = 100 Volts
10
µA
Collector-Emitter Cutoff Current
ICEO VCE = 100 Volts
100
µA
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX1
ICEX2
IEBO
VCE = 90Volts, VBE = 1.5Volts
VCE =90Volts, VBE = 1.5Volts,
TA = 150°C
VEB = 6 Volts
10
µA
10
mA
100
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Symbol
hFE1
hFE2
hFE3
hFE4
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 0.5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
IC = 5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
TA = -55°C
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Typ
Max Units
60
60
240
40
12
1.2
Volts
1.8
0.7
Volts
1.2
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 500 mA,
f = 10 MHz
3
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Open Circuit Input Capacitance
CIBO
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
IC = 2 A, IB1 = 200 mA
ts
tf
IC = 2 mA, IB1=IB2 = 200 mA
Typ
Max Units
15
250
pF
1,000
pF
100
100
ns
2
µs
200
ns
Copyright 2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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