2N5612 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N5612

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

ICEO

Collector Cutoff Current

VCE= 100V; IB= 0

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 2.5A ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V

2N5612

MIN MAX UNIT

100

V

1.5

V

2.2

V

1.0

mA

0.1

mA

0.1

mA

30

90

60

MHz

SPTECH website：www.superic-tech.com

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