2N6578 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
부품명
상세내역
일치하는 목록
2N6578 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
2N6578
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A
VBE(sat)-1 Base-Emitter Saturation voltage
IC= 10A; IB= 0.1A
VBE(sat)-2 Base-Emitter Saturation voltage
IC= 15A; IB= 0.15A
ICEO
Collector Cutoff current
VCE= 120V; IB= 0
ICBO
Collector Cutoff current
VCB= 120V; IE= 0
IEBO
Emitter Cut-off current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 3V
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
hFE-3
DC Current Gain
IC= 10A; VCE= 3V
hFE-4
DC Current Gain
IC= 15A; VCE= 4V
Switching Times
td
Delay Time
tr
Rise Time
ts
Storage Time
VCC= -30V; IC= 10A; IB1= -IB2= -0.1A,
tp= 300μs; Duty Cycle≤2.0%
tf
Fall Time
MIN MAX UNIT
120
V
2.8
V
4.0
V
3.5
V
4.5
V
1.0
mA
0.5
mA
7.5
mA
200
2000 20000
500
100
0.15
μs
1.0
μs
2.0
μs
7.0
μs
SPTECH website：www.superic-tech.com
2
Share Link: 