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2N5415CSM4

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

TT Electronics. 

SILICON PLANAR

EPITAXIAL PNP TRANSISTOR

2N5415CSM4, 2N5416CSM4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Symbols Parameters

Test Conditions

V(BR)CEO(1)

Collector-Emitter

Breakdown Voltage

IC = -10mA

IC = -10mA

2N5415

2N5416

V(BR)CER(1)

ICEO(1)

Collector-Emitter

Breakdown Voltage

Collector Cut-off Current

RBE = 50Ω

IC = -50mA

IB = 0

2N5416

VCE = -150V

ICBO(1)

Collector-Base Cut-off

Current

VCB = -175V

VCB = -280V

2N5415

2N5416

IEBO(1)

VCE(sat)

VBE(1)

Emitter Cut-off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Voltage

VEB = -4V

VEB = -6V

IC = -50mA

IC = -50mA

2N5415

2N5416

IB = -5mA

VCE = -10V

hFE(1)

DC Current Gain

IC = -50mA

VCE = -10V

IC = -50mA

VCE = -10V

2N5415

2N5416

Min.

-200

-300

-350

Typ.

Max.

Units

V

-50

-50

-50

µA

-20

-20

-0.5

V

-1.5

30

150

-

30

120

DYNAMIC CHARACTERISTICS

Symbols Parameters

Test Conditions

Min. Typ Max. Units

fT

Cobo

hfe

Transition Frequency

IC = -10mA VCE = -10V f =5MHz

15

Output Capacitance

VCB = -10V

IE = 0

f =1.0MHz

Small Signal Current Gain IC = -5mA VCE = -10V f =1.0kHz

25

MHz

25

pF

-

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9226

Website: http://www.semelab-tt.com

Issue 2

Page 2 of 3

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