2N5172 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N5172 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5172
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
TO92 Plastic Package
ABSOLUTE MAXIMUM RATINGS(Ta«25°C unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25°C
Derate Above 25°C
Power Dissipation @ Tc=25°C
Derate Above 25°C
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
Ic
PD
PD
T), T5tg
25
25
5
100
625
5
1.5
12
-55 to +150
THERMAL RESISTANCE
Junction to Ambient
Rthfl-a)
200
Junction to Case
R|h(J-c)
83.3
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector Emitter Voltage
VCEO lc=10mA,lB=0
25
Collector Cut Off Current
ICBO VCB=25V, IE=0
VCB=25V,lE=0,Ta=100°C
Collector Cut Off Current
ICES Vce =25V, VBE=OV
Emitter Cut Off Current
'EBO
VEB=5V, lc = 0
DC Current Gain
HFE VCE=10V,lc=10mA
100
Collector Emitter Saturation Voltage VcE(Mt) lc=10mA,lB=1mA
Base Emitter Saturation Voltage
VBE(SOI) lc=10mA,lB=1mA
0.75
Base Emitter On Voltage
VBE(on) VCE=10V,lc=10mA
0.5
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
fi
lc=2mA, VCE=5V
120
CCb IE=0, VCB=OV,f=1MHz
1.6
h,e VCE=10V,lc=10mA
100
f=1kHz
MAX
100
10
100
100
500
0.25
1.2
10
750
UNITS
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C/W
°C/W
UNITS
nA
MA
nA
nA
V
V
V
MHz
PF
Quality Semi-Conductors
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