2N6766 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N6766 Datasheet PDF : 2 Pages
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2N6765/2N6766
Electrical Characteristics (Tc - 25"C unless otherwise noted)
Symbol
Characteristic
Oft Characteristic*
V(BH]DSS Drain Sourca Breakdown Voltage
2N6766
2N8765
loss
Zero Gate Voltage Drain Currant
Uln
2002
150*
Max
1
4
IC6S
Gate-Body Leakage Current
On Charact«rl*lle<
V<3S(th) Gate Threshold Voltage
2.0
R08tan) Static Drain-Source On-Raslstance1
2N6798
2N6765
2N6766
PN6765
VDS(M)
Drain-Source On-Voltage1
2N6766
2N6765
9l>
Forward Transccnductance1
Dynamic Characteristic*
cis,
Input Capacitance
9,0
100Q
C(|S9
Output Capacitance
460
c«
Reverse Transfer Capacitance
1SQ
Switching Characteristics Oc-25*C, Figure* 9. 10)
tdfon)
t,
Turn-On Delay Time
Rise Time
•d{l)H)
t(
QB
Turn-Off Delay Time
Fall Time
Total Gate Ohtirgft
±100
4.0
O.OB5
0.12
0.1 63
0.218
2.7
3.0
27
3000
1200
500
35
100
125
100
iao2
1 Unit
Text Conditions
V
Ves-0 V, ID -i.O mA
mA
VM - Hated VDSS, VGS - o v
VQS = Rated VDSs,
VGS - o v. Tc - 125'c
nA
VGS-*20 V, VD3-0 V
V
n
V
S(U)
I0 -1.0 mA.VDS.-VGS
Vos - 10 v,
I0=19 A
I0-16 A
lo=ie A. TC = 12S'C
b-16 A. TC-1ZS*C
Voa-10 V
Ip - 30 A
ID- 25 A
VoS-15 V, ID -19 A
PF
VDJ = 25 V, VGS - 0 V
pF
1=1.0 MHz
PF
ns
V00 = 9S V, ID -19 A
ns
VGS -10 V, HGEN = 4.7 il
Ros-4-7 J2
ns
na
nC
VQS-10 V, ID -38 A
VDD-IOO V
Electrical Characteri«tlc» (Cont.) (Tc - 25"C unless otherwise noted)
Symbol [
Cn»r«ct«rl»tle
Mln
Typ
Max
Source-Drain Dlod* Characterlatlci
Is
Continuous Source Currant
2N6766
30
2N6765
25
ISM
Pulsed Source Current
2N6766
eoz
2N6765
so2
VSD
Diode Forward Voltage
2N6766
0.9
1.B
2NS76S
0,85
1.7
Ravarse Recovery Time
SOO2
^
QRR
Reverse Recovery Charge
102
Unit
Test Conditions
A
A
V
VGS " 0 V
ls - 30 A
is - as A
na
Vss-O V, Tj-150'C
!F-W dlF/dt-100A/MB
CC
VGS-O V, Tj-1BO'C
IF - W dlp/dt - 100 A//JS
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