2N6782 데이터 시트보기 (PDF) - Microsemi Corporation

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2N6782

N-CHANNEL MOSFET

Microsemi Corporation 

2N6782, 2N6784 and 2N6786

Notes: 1. Derate linearly 0.12 W/°C for TC > +25 °C.

2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal wires and may be limited due to

pin diameter.

3. IDM = 4 x ID1 as calculated in note 1.

MECHANICAL and PACKAGING

• CASE: Hermetically sealed, kovar base, nickel cap.

• TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).

• MARKING: Part number, date code, manufacturer’s ID.

• WEIGHT: Approximately 1.064 grams.

• See Package Dimensions on last page.

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

PART NOMENCLATURE

JAN 2N6782 (e3)

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

Symbol

di/dt

IF

RG

V DD

V DS

V GS

SYMBOLS & DEFINITIONS

Definition

Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.

Forward current

Gate drive impedance

Drain supply voltage

Drain source voltage, dc

Gate source voltage, dc

T4-LDS-0064, Rev. 3 (121467)

©2012 Microsemi Corporation

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