2N6049 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6049

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCER

Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.8A

VBE(on) Base-Emitter On Voltage

IC= -0.5A; VCE= -4V

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -30V; IB= 0

VCE= -90V; VBE(off)= -1.5V

VCE= -90V; VBE(off)= -1.5V,TC=150℃

VEB= -7V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -4V

hFE-2

DC Current Gain

IC= -3A; VCE= -4V

fT

Current Gain-Bandwidth Product

IC= -0.2A; VCE= -10V

2N6049

MIN MAX UNIT

-55

V

-60

V

-0.5

V

-2.0

V

-1.0

V

-0.5

mA

-1.0

-6.0

mA

-1.0

mA

25

150

6

3

MHz

SPTECH website：www.superic-tech.com

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