M6MF16S2AVP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M6MF16S2AVP
MITSUBISHI ELECTRIC
M6MF16S2AVP Datasheet PDF : 20 Pages
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PRELIMINARY Notice
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MITSUBISHI LSIs
M6MF16S2AVP
16777216-BIT (2 M x 8-BIT)
CMOS 3.3V-ONLY FLASH MEMORY
AC ELECTRICAL CHARACTERISTICS ( Ta = -20 ~ 85°C, Vcc = 2.7V ~ 3.6V, unless othe
Read-Only Mode
Symbol
Parameter
tRC
ta (AD)
ta (CE)
ta (OE)
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
tPHZ tPLQZ RP# low to output high-Z
tOH
tOEH
tPS
tOH Output hold from CE#, OE#, addresses
tWHGL OE# hold from WE# high
tPHEL RP# high recovery to CE# low
Timing measurements are made under AC waveforms for read operations.
Min
110
0
0
0
110
500
Limits
Typ
Max
110
110
55
30
30
300
Read/Write Mode (WE# control)
Symbol
Parameter
Min
tWC
tAS
tAH
tDS
tDH
tCS
tCH
tWP
tWPH
tBLS
tWPS
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tELWL
tWHEH
tWLWH
tWHWL
tPHHWH
Write cycle time
Address set-up time
Address hold time
Data set-up time
Data hold time
Chip enable set-up time
Chip enable hold time
Write pulse width
Write pulse width high
Block Lock set-up to write enable high
110
50
10
50
10
0
0
60
20
110
tBLH
tWPH tPHHWH Block Lock hold from valid SRD
0
tDAP tWHRH1 Duration of auto-program operation
tDAE tWHRH2 Duraruin of auto-erase operation
tWHRL tWHRL Write enable high to RY/BY# low
tPS tPHWL F-RP# high recovery to F-WE# low
500
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25°C
Limits
Typ
5
50
Max
80
600
110
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
8
May.1998 , Rev.1.2
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