MC-4R64FKE6D-840 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4R64FKE6D-840

Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)

Elpida Memory, Inc 

MC-4R64FKE6D-840

RIMM Module Current Profile

IDD

IDD1

IDD2

IDD3

IDD4

RIMM module power conditions Note1

One RDRAM in Read Note2, balance in NAP mode

One RDRAM in Read Note2, balance in Standby mode

One RDRAM in Read Note2, balance in Active mode

One RDRAM in Write, balance in NAP mode

MAX.

Unit

709.2

mA

795

mA

840

mA

769.2

mA

IDD5

One RDRAM in Write, balance in Standby mode

855

mA

IDD6

One RDRAM in Write, balance in Active mode

900

mA

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290

mA for x18 ECC module for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Data Sheet E0271N10 (Ver 1.0)

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