SKW20N60HS(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW20N60HS
(Rev.:2008)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW20N60HS

80A

70A

TC=80°C

60A

50A

40A

TC=110°C

30A

Ic

20A

10A

Ic

0A

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 16Ω)

100A

10A

1A

tP=4µs

15µs

50µs

200µs

1ms

DC

0.1A

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C,

Tj ≤150°C;VGE=15V)

180W

160W

140W

120W

100W

80W

60W

40W

20W

0W

25°C

50°C

75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

(Tj ≤ 150°C)

30A

20A

10A

0A

25°C

75°C

125°C

Figure 4.

TC, CASE TEMPERATURE

Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors

5

Rev. 2.3 Sep 08

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