US1AW 데이터 시트보기 (PDF) - Zibo Seno Electronic Engineering Co.,Ltd

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US1AW

1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE

Zibo Seno Electronic Engineering Co.,Ltd 

Z ibo Seno Electronic Engineering Co., Ltd.

1.0

US1AW – US1WM

10

0.8

1.0

0.6

0.4

0.2

Single phase half-wave

60 Hz resistive or inductive load

0

25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (°C)

Fig. 1 Forward Derating Curve

30

Pulse Width 8.3ms

Single Half-Sine-Wave

(JEDEC Method)

20

10

0.1

0.01

0.6

Tj = 25°C

Pulse width = 300 µs

0.8

1.0

1.2

1.4

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

100

Tj = 25°C

f = 1MHz

10

0

1

10

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Peak Forward Surge Current

50Ω NI (Non-inductive)

10Ω NI

(+)

50V DC

Approx

(-)

Device

Under

Test

1.0Ω

NI

Oscilloscope

(Note 1)

(-)

Pulse

Generator

(Note 2)

(+)

1

1

+0.5A

10

100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

trr

0A

-0.25A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 5/10ns/cm

US1AW – US1MW

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

2 of 2

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