US1AJ 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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US1AJ Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
US1A J---US1M J
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 1.0 A
FEATURES
◇ Plastic package has underwriters laboratories
vvvvvflam mability classification 94V-0
◇ For surface mount applications
◇ Glass passivated chip junctions
◇ Low profile package
◇ Eas y pick and place
◇ Ultrafas t recovery tim es for high efficiency
◇ Low forward voltage,low power loss
◇ Built-in strain relief,ideal for autom ated placem ent
◇ High temperature soldering:
111 250oC/10 seconds on terminals
MECHANICAL DATA
◇ Cas e:JEDEC SMAJ,m olded plas tic body over
passivated chip
◇ Term inals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.003 ounces, 0.084 grams
SMAJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient tem perature unless otherwise specified
1.3± 0.2
4.3± 0.1
5.6± 0.2
0.2± 0.05
Dimensions in millimeters
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
TL=110OC
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
VRRM
VRWS
VDC
IF(AV)
IFSM
US1AJ US1BJ US1DJ US1GJ US1JJ US1KJ US1MJ
UNITS
US1A US1B US1D US1G US1J US1K US1M
50
100
200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100
200 400 600 800 1000
V
1.0
A
30.0
A
Maximum instantaneous f orward voltage at1.0A VF
1.0
1.7
V
Maximum DC reverse current @TA=25oC
at rated DC blockjing voltage
@TA=125oC
Maximum reverse recovery time at IF=0.5A
IR=1.0A Irr=0.25A
Typical junction capacitance at 4.0V,1MHZ
Maximum thermal resistance (NOTE1)
Operating temperature range
IR
trr
CJ
RθJA
RθJL
TJ
Storage temperature range
TSTG
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm) copper pad area
5.0
100.0
50
20
55
20
-55------- +150
-55------- +150
μΑ
75
ns
15
pF
oC/W
oC
oC
www.diode.kr
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