BAS16 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAS16 Datasheet PDF : 4 Pages
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BAS16
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
VF
IF = 10 mA
VF
IF = 50 mA
VF
IF = 150 mA
VF
VR = 75 V
IR
VR = 75 V, Tj = 150 °C
IR
VR = 25 V, Tj = 150 °C
IR
VR = 0, f = 1 MHz
CD
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
MAX.
0.715
855
1
1.25
1000
50
30
4
6
UNIT
V
mV
V
V
nA
μA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
10000
100
Tj = 100 °C
10
25 °C
1000
VR = 20 V
100
1
10
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
1
0 25 50 75 100 125 150 175 200
14357
Tj – Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
Rev. 1.9, 11-Jul-17
2
Document Number: 85539
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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