IRF7480MTR1PBF 데이터 시트보기 (PDF) - Infineon Technologies

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IRF7480MTR1PBF

DirectFET® N-Channel Power MOSFET

Infineon Technologies 

IRF7480MTRPbF

1000

1000

100

TJ = 150°C

10

TJ = 25°C

1

VGS = 0V

0.1

0.2

0.4

0.6

0.8

1.0

VSD, Source-to-Drain Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage

48

Id = 1.0mA

47

46

45

44

43

42

41

40

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

100

OPERATION IN THIS AREA

10

LIMITED BY RDS(on)

100µsec

1msec

1

10msec

0.1 Tc = 25°C

DC

Tj = 150°C

Single Pulse

0.01

0.1

1

10

VDS, Drain-to-Source Voltage (V)

Fig 10. Maximum Safe Operating Area

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

-5 0 5 10 15 20 25 30 35 40

VDS, Drain-to-Source Voltage (V)

Fig 12. Typical Coss Stored Energy

4.5

4.0

Vgs = 5.5V

Vgs = 6.0V

Vgs = 7.0V

3.5 Vgs = 8.0V

Vgs = 10V

3.0

2.5

2.0

1.5

1.0

0.5

0 20 40 60 80 100 120 140 160 180 200

ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

5

2016-5-4

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