SBS811 데이터 시트보기 (PDF) - ON Semiconductor
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SBS811
ON Semiconductor
SBS811 Datasheet PDF : 6 Pages
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SBS811
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
Conditions
IR=2.0mA
IF=1.0A
IF=2.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When Mounted in Cu-foiled area of 1.92mm2×0.03mm
on glass epoxy substrate
When mounted on ceramic substrate (1000mm2×0.8mm)
min
30
Ratings
typ
0.30
0.35
75
75
70
Unit
max
V
0.35
V
0.40
V
1.25 mA
pF
20
ns
°C / W
°C / W
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
trr
Ordering Information
Device
SBS811-TL-E
Package
VEC8
Shipping
3,000pcs./reel
memo
Pb Free
IF -- VF
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Forward Voltage, VF -- V
IT08568
100
7
5
3
Ta=125°C
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
0.0001
0
5
IR -- VR
100°C
75°C
50°C
25°C
--25°C
10
15
20
25
Reverse Voltage, VR -- V
30
35
IT08569
No.8254-2/6
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