RB751V-40 데이터 시트보기 (PDF) - Nanjing International Group Co
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RB751V-40 Datasheet PDF : 2 Pages
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RB751V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low reverse current and low forward voltage
• High reliability
Applications
• High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
S8
Top View
Marking Code: "S8"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VRM
40
V
VR
30
V
IO
30
mA
IFSM
200
mA
Tj
125
OC
Ts
- 40 to + 125
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 1 mA
Reverse Current
at VR = 30 V
Capacitance Between Terminals
at VR = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
Typ.
Max.
Unit
VF
-
0.37
V
IR
-
0.5
µA
CT
2
-
pF
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