MC33989 데이터 시트보기 (PDF) - Freescale Semiconductor
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MC33989 Datasheet PDF : 66 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT (VDD1) IN STOP MODE (16)
VDD1 Output Voltage
IDD1 < = 2.0 mA
VDDSTOP
V
4.75
5.00
5.25
VDD1 Output Voltage
IDD1 < = 10 mA
VDDSTOP2
V
4.75
5.00
5.25
IDD1 Stop Output Current to Wake-up SBC
IDD1 Over Current to Wake-up Deglitcher Time (17)
Reset Threshold
Reset Threshold
Line Regulation (C at VDD1 = 47 µF Tantal)
5.5 V < VSUP < 27 V, IDD = 2.0 mA
IDD1SWU
10
17
25
mA
IDD1DGLT
40
55
75
µs
RSTSTOP1
4.5
4.6
4.7
V
RSTSTOP2
4.1
4.2
4.3
V
LRS
mV
—
5.0
25
Load Regulation (C at VDD1 = 47 µF Tantal)
1 mA < IDD < 10 mA
Max Decoupling Capacitor at VDD1 Pin, in Stop Mode(18)
TRACKING VOLTAGE REGULATOR (V2) (19)
LDS
—
VDDst-cap
—
mV
15
75
—
200
µF
V2 Output Voltage (C at V2 = 10 µF Tantal)
I2 from 2.0 to 200 mA, 5.5 V < VSUP < 27 V
V2
VDD1
0.99
1.0
1.01
I2 Output Current (for information only)
Depending Upon External Ballast Transistor
I2
mA
200
—
—
V2 Control Drive Current Capability
Worst Case at TJ = 125°C
12CTRL
mA
0.0
—
10
V2LOW Flag Threshold
LOGIC OUTPUT PIN (MISO) (20)
V2LTH
3.75
4.0
4.25
V
Low Level Output Voltage
IOUT = 1.5 mA
VOL
V
0.0
—
1.0
High Level Output Voltage
IOUT = 250 µA
Tri-Stated MISO Leakage Current
0 V < VMISO < VDD
VOH
V
VDD1-0.9
—
VDD1
IHZ
µA
-2.0
—
2.0
Notes
16. If stop mode is used, the capacitor connected at VDD pin should not exceed the maximum specified by the “VDDst-cap” parameter.
If capacitor value is exceeded, upon entering stop mode, VDD output current may exceed the IDDSWU and prevent the device to stay in
stop mode.
17. Guaranteed by design; however, it is not production tested.
18. Guaranteed by design.
19. V2 specification with external capacitor
- Stability requirement: C > 42 µF and ESR < 1.3 Ω (Tantalum capacitor), external resistor between base and emitter required
- Measurement conditions: Ballast transistor MJD32C, C = 10 µF Tantalum, 2.2 k resistor between base and emitter of ballast transistor
20. Push/Pull structure with tri-state condition CS high.
33989
8
Analog Integrated Circuit Device Data
Freescale Semiconductor
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