2SD2391 데이터 시트보기 (PDF) - Nanjing International Group Co

부품명

상세내역

일치하는 목록

2SD2391

SOT-89-3L Plastic-Encapsulate Transistors

Nanjing International Group Co 

DONGGUAN NANJING ELECTRONICS LTD.,

SOT-89-3L Plastic-Encapsulate Transistors

2SD2391 TRANSISTOR (NPN)

FEATURES

Low VCE(sat)

Marking: DT

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

Unit

60

V

60

V

6

V

2

A

0.5

W

150

℃

-55-150

℃

SOT-89-3L

1.BASE

2.COLLECTOR

3.EMITTER

123

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Symbol Test conditions

V(BR)CBO IC=50μA,IE=0

V(BR)CEO IC =1mA,IB=0

V(BR)EBO IE=50μA,IC=0

ICBO

VCB=50V,IE=0

IEBO

VEB=5V,IC=0

hFE(1) VCE=2V,IC=0.5A

hFE(2) VCE=2V,IC=1.5A

VCE(sat) IC=1A,IB=50mA

fT

VCE=2V,IC=0.5A, f=100MHz

Cob

VCB=10V,IE=0, f=1MHz

Min Typ Max Unit

60

V

60

V

6

V

0.1

μA

0.1

μA

120

270

45

0.35

V

210

MHz

21

pF

A,Jun,2011

Share Link: