2SD2257 데이터 시트보기 (PDF) - Toshiba
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2SD2257 Datasheet PDF : 4 Pages
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IC – VCE
4
3 mA 2 mA 1 mA 700 μA
3
500 μA
400 μA
300 μA
2
IB = 200 μA
1
0
0
1
Common emitter
Tc = 25°C (pulsed)
2
3
4
5
Collector-emitter voltage VCE (V)
10000
hFE – IC
3000
1000
300
25
Tc = 100°C
−55
100
30
0.01
Common emitter
VCE = 2 V
0.03
0.1
0.3
1
3
10
Collector current IC (A)
2SD2257
IC – VBE
3
Common emitter
VCE = 2 V
2
Tc = 100°C
1
−55
25
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
Tc = −55°C
1
100
25
0.5
0.3
0.3
0.5
1
Common emitter
IC/IB = 1000
3
5
Collector current IC (A)
10
5
3
1
0.5
0.1
VBE (sat) – IC
Common emitter
IC/IB = 1000
Tc = −55°C
25
100
0.3 0.5
1
3
5
Collector current IC (A)
Safe Operating Area
5
IC max (pulsed)*
3
1 ms*
1
100 μs*
0.5
10 ms*
0.3
*: Single nonrepetitive pulse
0.1
Tc = 25°C
0.05 Curves must be derated linearly
0.03 with increase in temperature.
0.3 0.5 1
3 5 10
30 50 100
300
Collector-emitter voltage VCE (V)
3
2006-11-21
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