C4265 데이터 시트보기 (PDF) - Renesas Electronics

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C4265

Silicon NPN Epitaxial

Renesas Electronics 

2SC4265

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

20

—

—

V IC = 1 mA, RBE = ∞

Collector cutoff current

ICBO

—

—

0.5

µA VCE = 15 V, IE = 0

Emitter cutoff current

IEBO

—

—

10

µA VEB = 3 V, IC = 0

Collector to emitter saturation voltage

VCE(sat)

—

—

1.0

V IC = 20 mA, IB = 4 mA

DC current transfer ratio

hFE

40

—

—

VCE = 10 V, IC = 10 mA

Collector output capacitance

Cob

—

—

1.5

pF VCB = 10 V, IE = 0, f = 1 MHz

Gain bandwidth product

fT

600

—

—

MHz VCE = 10 V, IC = 10 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

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