C4262 데이터 시트보기 (PDF) - Renesas Electronics

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C4262

Silicon NPN Epitaxial

Renesas Electronics 

2SC4262

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

20

Collector to emitter breakdown voltage V(BR)CEO

15

Collector cutoff current

ICBO

—

Emitter cutoff current

IEBO

—

Collector to emitter saturation voltage

VCE(sat)

—

DC current transfer ratio

hFE

50

Collector output capacitance

Cob

—

Gain bandwidth product

fT

1.4

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, IE = 0

—

—

V IC = 1 mA, RBE = ∞

—

0.5

µA VCB = 15 V, IE = 0

—

1.0

µA VEB = 3 V, IC = 0

—

0.5

V IC = 20 mA, IB = 4 mA

—

200

VCE = 10 V, IC = 5 mA

—

1.0

pF VCB = 10 V, IE = 0, f = 1MHz

2.9

—

GHz VCE = 10 V, IC = 5 mA

Rev.3.00 Aug 10, 2005 page 2 of 4

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