2SC5090 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC5090

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC5090

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

hFE

DC Current Gain

IC= 20mA ; VCE= 8V

︱S21e︱2 Insertion Power Gain

IC= 20mA;VCE= 8V; f= 1GHz

︱S21e︱2 Insertion Power Gain

IC= 20mA;VCE= 8V; f= 2GHz

fT

Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

Cre

Feedback Capacitance

NF

Noise Figure

IE= 0 ; VCB= 10V;f= 1.0MHz

IC= 5mA ; VCE= 8V; f= 1GHz

NF

Noise Figure

IC= 5mA ; VCE= 8V; f= 2GHz

MIN TYP. MAX UNIT

1

μA

1

μA

50

160

10

13

dB

7

7

10

dB

GHz

0.7

pF

0.5 0.95 pF

1.1 2.5 dB

1.7

dB

‹ hFE Classification

R

O

50-100

80-160

isc website：www.iscsemi.cn

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