2SC4940 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SC4940

Silicon NPN Power Transistors

New Jersey Semiconductor 

., One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistors

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4940

DESCRIPTION

• Collector-Emitter Sustaining Voltage-

: VCEo(sus)= 550V(Min)

• Fast Switching Speed

• Low Saturation Voltage

APPLICATIONS

• Horizontal deflection circuits of color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

550

V

VEBO

Emitter-Base Voltage

7

V

Ic

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

IB

Base Current-Continuous

2

A

IBM

Base Current-Peak

Total Power Dissipation

PT

@ TC=25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

4

A

30

W

150

°C

-55-150

°c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance.Junction to Case 4.16 -c/w

123

PIN 1.BASE

J COLLECTOR

3.BWIITTER

ITO-220 package

0

T

•- R -. -

mm

DIM WIN MAX

A 16.70 17.00

B 9.80 10.20

!„ 4.40 4.60

D 0.70 0.90

F 3.20 3.40

H 2.50 2.70

J 0.50 0.70

K 13.80 14.20

L 1.10 1.30

N 4.9E 5.18

Q 4.00 4.40

R 2.60 2.SO

N.I Semi-CoiKhictors reserves the right to change test conditions, parameter limits ;ind package dimensions without

notice. Information turnished by N.I Somi-Conduetors is believed to he both accnnite and reliable at the time of going

to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its u.se."

\'.l Seiiii-C'ondiicioi> encourages eiisloniers lo verily that datasheets are airrenl belure plncinu orders.

Quality Semi-Conductors

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