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B1477

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1477

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Beakdown Voltage IC= -10mA; IB= 0

V(BR)CBO Collector-Base Beakdown Voltage

IC= -50μA; IE=0

V(BR)EBO Emitter-Base Beakdown Voltage

IE=-50μA; IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= -3A; IB=B -0.3A

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -1A; VCE= -5V

MIN TYP. MAX UNIT

100

V

100

V

5

V

-1.5 V

-2.0 V

-10 μA

-10 μA

60

320

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

isc Website：www.iscsemi.cn

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