PHD95N03LT 데이터 시트보기 (PDF) - Philips Electronics
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PHD95N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
75
IS VGS = 0 V
(A)
60
45
03ad82
10
VGS
(V)
8
Tj = 25 ºC
ID = 50 A
6
03ad84
VDD = 6 V 12 V 24 V
30
4
175 ºC
Tj = 25 ºC
15
2
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
30
60
90
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 50 A; VDD = 24 V, 12 V and 6 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08216
Product data
Rev. 01 — 18 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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