NTD18N06L(2011) 데이터 시트보기 (PDF) - ON Semiconductor

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NTD18N06L
(Rev.:2011)

Power MOSFET 18 A, 60 V, Logic Level N−Channel DPAK

ON Semiconductor 

NTD18N06L, NTDV18N06L

SAFE OPERATING AREA

100

VGS = 15 V

SINGLE PULSE

TC = 25°C

10

100 ms

10 ms

1 ms

10 ms

1

dc

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

80

ID = 12 A

60

40

20

0

25

50

75

100

125

150 175

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

1.0

D = 0.5

0.2

0.1

0.1 0.05

0.02

0.01

SINGLE PULSE

0.01

1.0E-05

1.0E-04

P(pk)

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

t1

READ TIME AT t1

t2

TJ(pk) − TC = P(pk) RqJC(t)

DUTY CYCLE, D = t1/t2

1.0E-03

1.0E-02

t, TIME (ms)

Figure 13. Thermal Response

1.0E-01

1.0E+00

1.0E+01

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 14. Diode Reverse Recovery Waveform

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