NSVMMBTA05LT1G 데이터 시트보기 (PDF) - ON Semiconductor

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NSVMMBTA05LT1G

Driver Transistors

ON Semiconductor 

MMBTA05L, MMBTA06L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

MMBTA05L

MMBTA06L

V(BR)CEO

60

80

Vdc

−

−

Emitter −Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

ON CHARACTERISTICS

MMBTA05L

MMBTA06L

V(BR)EBO

4.0

ICES

−

ICBO

−

−

−

Vdc

0.1

mAdc

mAdc

0.1

0.1

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

Base −Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

−

100

−

100

−

VCE(sat)

−

0.25

Vdc

VBE(on)

−

1.2

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 4)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

fT

100

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

5.0 ms

+10 V

0

tr = 3.0 ns

TURN-ON TIME

-1.0 V

VCC

+40 V

TURN-OFF TIME

+VBB

VCC

+40 V

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

5.0 ms

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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